Electronic Nanodevices
@ELENA__LAB
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Pushing the boundaries of electronic nanodevices through innovative research on 2D materials. Join our dynamic team at University of Salerno.
Joined June 2023
Congrats @AlwinDaus and Lauren Hoang @laurenhoang8 for leading this nice study, on the effects of back-gate insulators for ultrathin ITO transistors. Stability is improved with thinnest, smoothest, HfO2 gate insulators. @srcorg
https://t.co/sJbJ1vONBo
The last piece of my #postdoc work from @Stanford with @profericpop published now in @IEEEorg TED. We studied different back-gate dielectrics for ITO transistors. Low roughness ensures good mobility and low EOT improves bias stress stability: https://t.co/yEOlKr9fpP
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🌟 Meet Kimberly Intonti, our exceptional PhD student, presenting her poster on "Role of traps in WS2/Al2O3/Si capacitors" at #INFOS23. Proud to showcase our cutting-edge research and collaboration with Tyndall National Institute. #ResearchFrontiers #Nanoelectronics
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Discover the impact of air pressure on conductance and mobility in few-layer ReSe2 transistors. Our study reveals a transition from positive to negative photoconductivity as pressure decreases. Read more: [ https://t.co/LYvjFvN0zQ]
#Research #Photoconductivity #Nanotech
advanced.onlinelibrary.wiley.com
Few-layer ReSe2 field effect transistors are dramatically affected by air pressure. The channel conductance and mobility increase while lowering pressure. ReSe2 exhibits positive photoconductivity...
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Join us at #NMDC23, the IEEE Nanotechnology Materials and Devices Conference, in Paestum on October 22-25. Discover the latest breakthroughs in nanotechnology and connect with industry leaders. Don't miss this premier event! #Conference #Nanotech #Paestum
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